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| Si4684DY New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) () 0.0094 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A)a 16 14 Qg (Typ) 14 nC FEATURES * Extremely Low Qgd WFET(R) Technology for Low Switching Losses * TrenchFET(R) Power MOSFET * 100 % Rg Tested RoHS COMPLIANT APPLICATIONS * High-Side DC/DC Conversion - Notebook - Server SO-8 D S S S G 1 2 3 4 Top View Ordering Information: Si4684DY-T1-E3 (Lead (Pb)-free) 8 7 6 5 D D D D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C TC = 70 C TA = 25 C TA = 70 C TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C TC = 70 C TA = 25 C TA = 70 C Symbol VDS VGS Limit 30 12 16 12.9 12b,c 9.5b,c 50 4.0 2.3b,c 20 20 4.45 2.85 2.50b,c 1.6b,c - 55 to 150 Unit V Continuous Drain Current (TJ = 150 C) ID Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy IDM IS IAS EAS A mJ Maximum Power Dissipation PD W Operating Junction and Storage Temperature Range TJ, Tstg C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb,d t 10 sec Steady State Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under Steady State conditions is 90 C/W. Document Number: 73324 S-61013-Rev. B, 12-Jun-06 www.vishay.com 1 Symbol RthJA RthJF Typical 36 22 Maximum 50 28 Unit C/W Si4684DY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = 9.5 A, di/dt = 100 A/s, TJ = 25 C IS = 2.3 A 0.70 30 26 16 14 TC = 25 C 4 50 1.1 45 40 A V ns nC ns Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = 15 V, RL = 1.87 ID 8 A, VGEN = 10 V, Rg = 1 VDD = 15 V, RL = 1.87 ID 8 A, VGEN = 4.5 V, Rg = 1 f = 1 MHz 0.2 VDS = 15 V, VGS = 10 V, ID = 11 A VDS = 15 V, VGS = 4.5 V, ID = 11 A VDS = 15 V, VGS = 0 V, f = 1 MHz 2080 340 135 30 14 3 2.8 0.55 15 60 28 9 12 12 45 11 0.9 25 100 45 15 20 20 70 18 ns 45 21 nC pF VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS= 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = VGS, ID = 5 mA VDS = 0 V, VGS = 12 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 9.5 A VDS = 15 V, ID = 16 A 30 0.0078 0.0092 45 0.0094 0.0115 0.6 1.1 100 1 10 30 30 4.5 1.5 V mV/C V nA A A S Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73324 S-61013-Rev. B, 12-Jun-06 Si4684DY Vishay Siliconix TYPICAL CHARACTERISTICS 50 VGS = 10 thru 3 V I D - Drain Current (A) I D - Drain Current (A) 25 C unless noted 1.2 40 1.0 0.8 30 0.6 TC = 125 C 0.4 20 2V 10 0.2 25 C - 55 C 0 0.0 0.5 1.0 1.5 2.0 0.0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.012 2500 Transfer Characteristics rDS(on) - On-Resistance (m) 0.011 C - Capacitance (pF) Ciss 2000 VGS = 4.5 V 0.010 1500 0.009 VGS = 10 V 0.008 1000 0.007 500 Crss 0 0 5 10 15 20 25 30 35 40 0 5 10 Coss 0.006 15 20 25 30 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 V GS - Gate-to-Source Voltage (V) ID = 11 A 8 rDS(on) - On-Resistance (Normalized) 1.8 ID = 12 A Capacitance 1.6 VGS = 10 V 1.4 VGS = 4.5 V 6 1.2 4 VDS = 10 V VDS = 15 V VDS = 20 V 1.0 2 0.8 0 0 4 8 12 16 20 24 28 32 0.6 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 73324 S-61013-Rev. B, 12-Jun-06 On-Resistance vs. Junction Temperature www.vishay.com 3 Si4684DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 40 rDS(on) - Drain-to-Source On-Resistance () 10 TJ = 150 C I S - Source Current (A) 1 0.05 ID = 12 A 0.04 0.03 0.1 0.02 TJ = 125 C 0.01 TJ = 25 C 0.00 0.01 TJ = 25 C 0.001 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 0.4 200 On-Resistance vs. Gate-to-Source Voltage 0.2 160 Power (W) VGS(th) (V) 0.0 ID = 5 mA 120 - 0.2 80 - 0.4 ID = 250 A - 0.6 - 50 40 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Temperature (C) Threshold Voltage 100 *Limited by rDS(on) 10 I D - Drain Current (A) Single Pulse Power, Junction-to-Ambient 1 ms 1 10 ms 100 ms 1s 0.1 TA = 25 C Single Pulse 0.01 0.1 1 10 100 10 s dc VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73324 S-61013-Rev. B, 12-Jun-06 Si4684DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 20 100 16 ID - Drain Current (A) IC - Peak Avalanche Current (A) 10 12 8 1 L * ID BV - V DD 4 Package Limited TA = 0.1 0 0 25 50 75 100 125 150 0.00001 0.0001 0.001 0.01 0.1 1 TC - Case Temperature (C) TA - Time In Avalanche (sec) Current Derating* Single Pulse Avalanche Capability *The power dissipation PD is based on TJ(max) = 175 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73324 S-61013-Rev. B, 12-Jun-06 www.vishay.com 5 Si4684DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C unless noted 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 70 C/W 3. T JM - TA = PDMZthJA(t) t1 t2 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73324. www.vishay.com 6 Document Number: 73324 S-61013-Rev. B, 12-Jun-06 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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